This paper presents an artificial intelligence (AI)-assisted optimization framework for on-off current feedback controlled (ONOFIC)-enhanced domino circuits implemented in advanced fin field-effect transistor (FinFET) and carbon nanotube field-effect transistor (CNTFET) technologies. The framework integrates artificial neural network (ANN) surrogate modeling with evolutionary optimization (genetic algorithm (GA), particle swarm optimization (PSO), and NSGA-II) to reduce leakage, improve energy efficiency, and enhance robustness under process voltage temperature (PVT) variations, aging effects (bias temperature instability (BTI)/hot carrier injection (HCI)), and antenna-induced parasitic coupling. By replacing repeated HSPICE simulations with fast ANN predictions, the proposed methodology reduces computational cost by more than 90% while achieving up to 30–35% gains in leakage and power-delay product (PDP)/energy-delay product (EDP) performance. The results demonstrate that ANN-assisted evolutionary optimization provides a scalable and technology-agnostic workflow suitable for next-generation internet of thing (IoT), radio frequency (RF)-integrated, and low-power very large scale integration (VLSI) platforms.
Keywords
FinFET CNTFET; Low-power very large scale integration; On-off current feedback controlled; Process voltage temperature robustness; Subthreshold leakage