Restoration circuits for low power reduce swing of 6T and 8T SRAM cell with improved read and write margins

Ram Murti Rawat, Vinod Kumar


This article clarifies about the variables that influence the static noise margin (SNM) of a static random-access memory. Track down the improved stability of proposed 8T SRAM cell which is superior to conventional 6T SRAM cell utilizing Swing Restored circuit with voltages Q and QB bar are peruse and Compose activity. This SRAM cell strategy on the circuit or engineering level is needed to improve read static noise margin (RSNM), write static noise margin (WSNM) and hold static noise margin (HSNM). This article relative investigation of conventional 6T, standard 8T and proposed 8T SRAM cells with improved stability and static noise margin is finished for 180 nm CMOS innovation. This paper is coordinated as follows: Introduction in area 1, The 6T SRAM cell are portrayed in segment 2. In area 3, proposed 8T SRAM cell is portrayed. In area 4, standard 8T SRAM cell. Segment 5 incorporates the simulation and results which give examination of different boundaries of 6T and 8T SRAM cells and segment 6 conclusions.


Dual node voltage; Low power SRAM; Read noise margin; Swing restoration; Write noise margin

Full Text:




  • There are currently no refbacks.

Creative Commons License
This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

International Journal of Reconfigurable and Embedded Systems (IJRES)
p-ISSN 2089-4864, e-ISSN 2722-2608
This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).

Web Analytics Made Easy - Statcounter View IJRES Stats