A compact model of transconductance and drain conductance for DMG-GC-DOT cylindrical gate MOSFET

Hind Jaafar, Abdellah Aouaj, Benjamin Iñiguez

Abstract


A compact model for dual-material gate graded-channel and dual-oxide
thickness with two dielectric constant different cylindrical gate (DMG-GC-
DOTTDCD) MOSFET was investigated in terms of transconductance, drain
conductance and capacitance. Short channel effects are modeled with simple
expressions, and incorporated into the core of the model (at the drain
current). The design effectiveness of DMG-GC-DOTTDCD was monitored
in comparing with the DMG-GC-DOT transistor, the effect of variations of
technology parameters, was presented in terms of gate polarization and drain
polarization. The results indicate that the DMG-GC-DOTTDCD devices
have characteristics higher than the DMG-GC-DOT MOSFET. To validate
the proposed model, we used the results obtained from the simulation of the
device with the SILVACO-ATLAS-TCAD software.

Keywords


Transconductance Drain Conductance Capacitance DMG-GC-DOT DMG-GC-DOTTDCD Short channel effects ATLAS (SILVACO)



DOI: http://doi.org/10.11591/ijres.v9.i1.pp%25p
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Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.